? electrical datasheet* GA01PNS100-CAU aug 2012 http://www.genesicsemi.com /index.php/hit-sic/baredie ? silicon carbide pin diode chip features ? 10 kv blocking ? 250 c operating temperature ? fast turn off characteristics ? soft reverse recovery characteristics ? ultra-fast high temperature switching advantages applications ? industry?s lowest conduction losses ? reduced stacking ? reduced system complexity/increased reliability ? ? ignition/trigger circuits ? oil/downhole ? lighting ? defense maximum ratings at t j = 250 c, unless otherwise specified parameter symbol conditions values unit repetitive peak reverse voltage v rrm 10 kv continuous forward current i f t c 150 c 2 a rms forward current i f ( rms ) t c 150 c 1 a operating and storage temperature t j , t stg -55 to 250 c electrical characteristics at t j = 250 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. diode forward voltage v f i f = 2 a, t j = 25 c 4.4 4.8 v i f = 2 a, t j = 225 c 4.1 4.5 reverse current i r v r = 10 kv, t j = 25 c 0.1 3 a v r = 10 kv, t j = 225 c 50 total reverse recovery charge q rr i f i f,max di f /dt = 70 a/ s t j = 225 c v r = 1000 v i f = 1.5 a 558 nc switching time t s v r = 1000 v i f = 1.5 a < 236 ns total capacitance c v r = 1 v, f = 1 mhz, t j = 25 c 20 pf v r = 400 v, f = 1 mhz, t j = 25 c 5 v r = 1000 v, f = 1 mhz, t j = 25 c 4 total capacitive charge q c v r = 1000 v, f = 1 mhz, t j = 25 c 5.34 nc *for chip size and metallization, please refer to the mechanical datasheet (must have a non-disclosure agreement with genesic semiconductor). ? ? ? ?
? electrical datasheet* GA01PNS100-CAU aug 2012 http://www.genesicsemi.com /index.php/hit-sic/baredie ? figure 1: typical forward characteristics figure 2: typical reverse characteristics figure 3: typical junction capacitance vs reverse voltage characteristics figure 4: typical turn off characteristics at i k = 0.5 a and v r = 1000 v figure 5: typical turn off characteristics at t j = 225 c and v r = 1000 v figure 6: reverse recovery charge vs cathode current
? electrical datasheet* GA01PNS100-CAU aug 2012 http://www.genesicsemi.com /index.php/hit-sic/baredie ? figure 7: reverse recovery time vs cathode current revision history date revision comments supersedes 2012/08/15 0 initial release published by genesic semiconductor, inc. 43670 trade center place suite 155 dulles, va 20166 genesic semiconductor, inc. reserves right to make changes to the product specificat ions and data in this document without noti ce. genesic disclaims all and any warranty and liability arising out of use or application of any product. no license, express or i mplied to any intellectual property rights is granted by this document. unless otherwise expressly indicated, genesic products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic cont rol and weapons systems, nor in applications where their failure may result in death , personal injury and/or property damage.
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